Multi-zone semiconductor substrate supports

ABSTRACT

Exemplary support assemblies may include a top puck and a backing plate coupled with the top puck. The support assemblies may include a cooling plate coupled with the backing plate. The support assemblies may include a heater coupled between the cooling plate and the backing plate. The support assemblies may also include a back plate coupled with the backing plate about an exterior of the backing plate. The back plate may at least partially define a volume, and the heater and the cooling plate may be housed within the volume.

TECHNICAL FIELD

The present technology relates to components and apparatuses forsemiconductor manufacturing. More specifically, the present technologyrelates to substrate support assemblies and other semiconductorprocessing equipment.

BACKGROUND

Integrated circuits are made possible by processes which produceintricately patterned material layers on substrate surfaces. Producingpatterned material on a substrate requires controlled methods forforming and removing material. The temperature at which these processesoccur may directly impact the final product. Substrate temperatures areoften controlled and maintained with the assembly supporting thesubstrate during processing. Temperature fluctuations that may occuracross the surface or through the depth of the supporting assembly maycreate temperature zones or regions across a substrate. These regions ofvarying temperature may affect processes performed on or to thesubstrate, which may often reduce the uniformity of deposited films oretched structures along the substrate. Depending on the degree ofvariation along the surface of the substrate, device failure may occurdue to the inconsistencies produced by the applications.

Additionally, the structures housed within a semiconductor processingchamber may be affected by the processes performed within the chamber.For example, materials deposited within the chambers may deposit on theequipment within the chamber as well as on the substrate itself.Material may also deposit on support pedestals, which may cause issueswith substrate alignment and re-deposition on a substrate beingprocessed.

Thus, there is a need for improved systems and methods that can be usedto produce high quality devices and structures. These and other needsare addressed by the present technology.

SUMMARY

Exemplary support assemblies may include a top puck and a backing platecoupled with the top puck. The support assemblies may include a coolingplate coupled with the backing plate. The support assemblies may includea heater coupled between the cooling plate and the backing plate. Thesupport assemblies may also include a back plate coupled with thebacking plate about an exterior of the backing plate. The back plate mayat least partially define a volume, and the heater and the cooling platemay be housed within the volume.

In some embodiments, the top puck may define a thermal break between aninterior zone and an exterior zone of the top puck. The thermal breakmay be or include a trench defined about an interior radius of the toppuck. In embodiments, the thermal break may include a first trenchdefined about an interior radius of the top puck at a first surface ofthe top puck, and a second trench defined about a second interior radiusof the top puck at a second surface of the top puck opposite the firstsurface. At least one of the first trench and the second trench mayextend discontinuously about the top puck. The cooling plate may defineat least one channel within the cooling plate configured to distribute afluid delivered from a central port in the cooling plate.

In embodiments, the heater may include a first heater coupled with thebacking plate at a first location, and a second heater coupled with thebacking plate at a second location radially outward from the firstlocation. The cooling plate and the backing plate may define a gaplocated radially between the first heater and the second heater. In someembodiments, the second heater may extend to a radial edge of a topsurface of the cooling plate. The first heater and the second heater maybe configured to operate independently of one another. The first heaterand the second heater may be configured to maintain temperatureuniformity across a substrate on the substrate support assembly of+/−0.5° C. The top puck may be or include aluminum. The heater may be orinclude a polymer heater. The top puck may define at least one recessedledge about an exterior radius of the top puck. The substrate supportassemblies may include an edge ring that may extend about the top puckalong the recessed ledge. The edge ring may extend vertically above atop plane of the top puck. The edge ring may be characterized by anouter diameter equal to an outer diameter of the top puck. The top puckmay define a plurality of recesses, and the edge ring may be configuredto seat on ceramic pins located within the plurality of recesses. Insome embodiments, the edge ring may seat on the ceramic pins withoutcontacting the top puck.

The present technology also encompasses substrate support assembliesthat may include a top puck. The substrate support assemblies mayinclude a plurality of heaters coupled to the top puck. The heaters mayinclude resistive heaters extending across a back surface of the toppuck. The substrate support assemblies may include a cooling platecoupled with the plurality of heaters at a first surface of the coolingplate. The cooling plate may define a channel configured to distribute atemperature controlled fluid through the cooling plate. The substratesupport assembly may also include an insulator coupled with a secondsurface of the cooling plate opposite the first surface.

In some embodiments, the top puck and the insulator may include aceramic. The plurality of heaters may include at least four printedheaters, and at least three of the four printed resistive heaters may becharacterized by an annular shape in embodiments. The top puck and thecooling plate may define a channel extending below an outer edge of thetop puck, and the channel may be configured to seat an elastomericelement. In some embodiments, the substrate support assemblies may alsoinclude an edge ring positioned along the recessed ledge about anexterior of the cooling plate.

Such technology may provide numerous benefits over conventional systemsand techniques. For example, the particular heating and cooling devicecouplings may provide improved heating and cooling performance forimproved wafer process uniformity. Additionally, the various purgingchannels may improve removal of residual particles during fabricationoperations. These and other embodiments, along with many of theiradvantages and features, are described in more detail in conjunctionwith the below description and attached figures.

BRIEF DESCRIPTION OF THE DRAWINGS

A further understanding of the nature and advantages of the disclosedtechnology may be realized by reference to the remaining portions of thespecification and the drawings.

FIG. 1 shows a top plan view of an exemplary processing system accordingto embodiments of the present technology.

FIG. 2A shows a schematic cross-sectional view of an exemplaryprocessing chamber according to embodiments of the present technology.

FIG. 2B shows a detailed view of an exemplary showerhead according toembodiments of the present technology.

FIG. 3 shows a bottom plan view of an exemplary showerhead according toembodiments of the present technology.

FIG. 4 shows a schematic partial cross-sectional view of an exemplarysubstrate support assembly according to embodiments of the presenttechnology.

FIG. 5 shows a schematic partial cross-sectional view of an exemplarysubstrate support assembly according to embodiments of the presenttechnology.

FIG. 6 shows a top plan view of an exemplary backing plate according toembodiments of the present technology.

FIG. 7A shows a schematic partial cross-sectional view of an exemplarysubstrate support assembly according to embodiments of the presenttechnology.

FIG. 7B shows a schematic partial cross-sectional view of an exemplarysubstrate support assembly according to embodiments of the presenttechnology.

FIG. 8 shows a schematic partial cross-sectional view of an exemplarysubstrate support assembly according to embodiments of the presenttechnology.

FIG. 9 shows a schematic partial cross-sectional view of an exemplarysubstrate support assembly according to embodiments of the presenttechnology.

Several of the figures are included as schematics. It is to beunderstood that the figures are for illustrative purposes, and are notto be considered of scale unless specifically stated to be of scale.Additionally, as schematics, the figures are provided to aidcomprehension and may not include all aspects or information compared torealistic representations, and may include exaggerated material forillustrative purposes.

In the appended figures, similar components and/or features may have thesame reference label. Further, various components of the same type maybe distinguished by following the reference label by a letter thatdistinguishes among the similar components. If only the first referencelabel is used in the specification, the description is applicable to anyone of the similar components having the same first reference labelirrespective of the letter.

DETAILED DESCRIPTION

The present technology includes improved pedestal designs for heatingand cooling distribution during semiconductor processing operations.While conventional pedestals may control the general temperature of thesubstrate during operations, the presently described technology allowsfor improved control of the temperature characteristics across theentirety of the surface and exterior of the pedestal. The technologyallows for the pedestal to be controlled in multiple independent zonesin a finite temperature range. In so doing, improved operations may beperformed because a substrate residing on the pedestal can be maintainedat a more uniform temperature profile across the entire surface. Theseand other benefits will be explained in detail below.

Although the remaining disclosure will routinely identify specificetching processes utilizing the disclosed technology, it will be readilyunderstood that the systems and methods are equally applicable todeposition and cleaning processes as may occur in the describedchambers. Accordingly, the technology should not be considered to be solimited as for use with etching processes alone. The disclosure willdiscuss one possible system and chamber that can be used with thepresent technology to perform certain removal operations beforeadditional variations and adjustments to this system according toembodiments of the present technology are described.

FIG. 1 shows a top plan view of one embodiment of a processing system100 of deposition, etching, baking, and curing chambers according toembodiments. In the figure, a pair of front opening unified pods (FOUPs)102 supply substrates of a variety of sizes that are received by roboticarms 104 and placed into a low pressure holding area 106 before beingplaced into one of the substrate processing chambers 108 a-f, positionedin tandem sections 109 a-c. A second robotic arm 110 may be used totransport the substrate wafers from the holding area 106 to thesubstrate processing chambers 108 a-f and back. Each substrateprocessing chamber 108 a-f, can be outfitted to perform a number ofsubstrate processing operations including the dry etch processesdescribed herein in addition to cyclical layer deposition (CLD), atomiclayer deposition (ALD), chemical vapor deposition (CVD), physical vapordeposition (PVD), etch, pre-clean, degas, orientation, and othersubstrate processes.

The substrate processing chambers 108 a-f may include one or more systemcomponents for depositing, annealing, curing and/or etching a dielectricfilm on the substrate wafer. In one configuration, two pairs of theprocessing chambers, e.g., 108 c-d and 108 e-f, may be used to depositdielectric material on the substrate, and the third pair of processingchambers, e.g., 108 a-b, may be used to etch the deposited dielectric.In another configuration, all three pairs of chambers, e.g., 108 a-f,may be configured to etch a dielectric film on the substrate. Any one ormore of the processes described may be carried out in chamber(s)separated from the fabrication system shown in different embodiments. Itwill be appreciated that additional configurations of deposition,etching, annealing, and curing chambers for dielectric films arecontemplated by system 100.

FIG. 2A shows a cross-sectional view of an exemplary process chambersystem 200 with partitioned plasma generation regions within theprocessing chamber. During film etching, e.g., titanium nitride,tantalum nitride, tungsten, silicon, polysilicon, silicon oxide, siliconnitride, silicon oxynitride, silicon oxycarbide, etc., a process gas maybe flowed into the first plasma region 215 through a gas inlet assembly205. A remote plasma system (RPS) 201 may optionally be included in thesystem, and may process a first gas which then travels through gas inletassembly 205. The inlet assembly 205 may include two or more distinctgas supply channels where the second channel (not shown) may bypass theRPS 201, if included.

A cooling plate 203, faceplate 217, ion suppressor 223, showerhead 225,and a substrate support 265, having a substrate 255 disposed thereon,are shown and may each be included according to embodiments. Thepedestal 265 may have a heat exchange channel through which a heatexchange fluid flows to control the temperature of the substrate, whichmay be operated to heat and/or cool the substrate or wafer duringprocessing operations. The wafer support platter of the pedestal 265,which may comprise aluminum, ceramic, or a combination thereof, may alsobe resistively heated in order to achieve relatively high temperatures,such as from up to or about 100° C. to above or about 1100° C., using anembedded resistive heater element.

The faceplate 217 may be pyramidal, conical, or of another similarstructure with a narrow top portion expanding to a wide bottom portion.The faceplate 217 may additionally be flat as shown and include aplurality of through-channels used to distribute process gases. Plasmagenerating gases and/or plasma excited species, depending on use of theRPS 201, may pass through a plurality of holes, shown in FIG. 2B, infaceplate 217 for a more uniform delivery into the first plasma region215.

Exemplary configurations may include having the gas inlet assembly 205open into a gas supply region 258 partitioned from the first plasmaregion 215 by faceplate 217 so that the gases/species flow through theholes in the faceplate 217 into the first plasma region 215. Structuraland operational features may be selected to prevent significant backflowof plasma from the first plasma region 215 back into the supply region258, gas inlet assembly 205, and fluid supply system 210. The faceplate217, or a conductive top portion of the chamber, and showerhead 225 areshown with an insulating ring 220 located between the features, whichallows an AC potential to be applied to the faceplate 217 relative toshowerhead 225 and/or ion suppressor 223. The insulating ring 220 may bepositioned between the faceplate 217 and the showerhead 225 and/or ionsuppressor 223 enabling a capacitively coupled plasma (CCP) to be formedin the first plasma region. A baffle (not shown) may additionally belocated in the first plasma region 215, or otherwise coupled with gasinlet assembly 205, to affect the flow of fluid into the region throughgas inlet assembly 205.

The ion suppressor 223 may comprise a plate or other geometry thatdefines a plurality of apertures throughout the structure that areconfigured to suppress the migration of ionically-charged species out ofthe first plasma region 215 while allowing uncharged neutral or radicalspecies to pass through the ion suppressor 223 into an activated gasdelivery region between the suppressor and the showerhead. Inembodiments, the ion suppressor 223 may comprise a perforated plate witha variety of aperture configurations. These uncharged species mayinclude highly reactive species that are transported with less reactivecarrier gas through the apertures. As noted above, the migration ofionic species through the holes may be reduced, and in some instancescompletely suppressed. Controlling the amount of ionic species passingthrough the ion suppressor 223 may advantageously provide increasedcontrol over the gas mixture brought into contact with the underlyingwafer substrate, which in turn may increase control of the depositionand/or etch characteristics of the gas mixture. For example, adjustmentsin the ion concentration of the gas mixture can significantly alter itsetch selectivity, e.g., SiNx:SiOx etch ratios, Si:SiOx etch ratios, etc.In alternative embodiments in which deposition is performed, it can alsoshift the balance of conformal-to-flowable style depositions fordielectric materials.

The plurality of apertures in the ion suppressor 223 may be configuredto control the passage of the activated gas, i.e., the ionic, radical,and/or neutral species, through the ion suppressor 223. For example, theaspect ratio of the holes, or the hole diameter to length, and/or thegeometry of the holes may be controlled so that the flow ofionically-charged species in the activated gas passing through the ionsuppressor 223 is reduced. The holes in the ion suppressor 223 mayinclude a tapered portion that faces the plasma excitation region 215,and a cylindrical portion that faces the showerhead 225. The cylindricalportion may be shaped and dimensioned to control the flow of ionicspecies passing to the showerhead 225. An adjustable electrical bias mayalso be applied to the ion suppressor 223 as an additional means tocontrol the flow of ionic species through the suppressor.

The ion suppressor 223 may function to reduce or eliminate the amount ofionically charged species traveling from the plasma generation region tothe substrate. Uncharged neutral and radical species may still passthrough the openings in the ion suppressor to react with the substrate.It should be noted that the complete elimination of ionically chargedspecies in the reaction region surrounding the substrate may not beperformed in embodiments. In certain instances, ionic species areintended to reach the substrate in order to perform the etch and/ordeposition process. In these instances, the ion suppressor may help tocontrol the concentration of ionic species in the reaction region at alevel that assists the process.

Showerhead 225 in combination with ion suppressor 223 may allow a plasmapresent in first plasma region 215 to avoid directly exciting gases insubstrate processing region 233, while still allowing excited species totravel from chamber plasma region 215 into substrate processing region233. In this way, the chamber may be configured to prevent the plasmafrom contacting a substrate 255 being etched. This may advantageouslyprotect a variety of intricate structures and films patterned on thesubstrate, which may be damaged, dislocated, or otherwise warped ifdirectly contacted by a generated plasma. Additionally, when plasma isallowed to contact the substrate or approach the substrate level, therate at which oxide species etch may increase. Accordingly, if anexposed region of material is oxide, this material may be furtherprotected by maintaining the plasma remotely from the substrate.

The processing system may further include a power supply 240electrically coupled with the processing chamber to provide electricpower to the faceplate 217, ion suppressor 223, showerhead 225, and/orpedestal 265 to generate a plasma in the first plasma region 215 orprocessing region 233. The power supply may be configured to deliver anadjustable amount of power to the chamber depending on the processperformed. Such a configuration may allow for a tunable plasma to beused in the processes being performed. Unlike a remote plasma unit,which is often presented with on or off functionality, a tunable plasmamay be configured to deliver a specific amount of power to the plasmaregion 215. This in turn may allow development of particular plasmacharacteristics such that precursors may be dissociated in specific waysto enhance the etching profiles produced by these precursors.

A plasma may be ignited either in chamber plasma region 215 aboveshowerhead 225 or substrate processing region 233 below showerhead 225.In embodiments, the plasma formed in substrate processing region 233 maybe a DC biased plasma formed with the pedestal acting as an electrode.Plasma may be present in chamber plasma region 215 to produce theradical precursors from an inflow of, for example, a fluorine-containingprecursor or other precursor. An AC voltage typically in the radiofrequency (RF) range may be applied between the conductive top portionof the processing chamber, such as faceplate 217, and showerhead 225and/or ion suppressor 223 to ignite a plasma in chamber plasma region215 during deposition. An RF power supply may generate a high RFfrequency of 13.56 MHz but may also generate other frequencies alone orin combination with the 13.56 MHz frequency.

FIG. 2B shows a detailed view 253 of the features affecting theprocessing gas distribution through faceplate 217. As shown in FIGS. 2Aand 2B, faceplate 217, cooling plate 203, and gas inlet assembly 205intersect to define a gas supply region 258 into which process gases maybe delivered from gas inlet 205. The gases may fill the gas supplyregion 258 and flow to first plasma region 215 through apertures 259 infaceplate 217. The apertures 259 may be configured to direct flow in asubstantially unidirectional manner such that process gases may flowinto processing region 233, but may be partially or fully prevented frombackflow into the gas supply region 258 after traversing the faceplate217.

The gas distribution assemblies such as showerhead 225 for use in theprocessing chamber section 200 may be referred to as dual channelshowerheads (DCSH) and are additionally detailed in the embodimentsdescribed in FIG. 3. The dual channel showerhead may provide for etchingprocesses that allow for separation of etchants outside of theprocessing region 233 to provide limited interaction with chambercomponents and each other prior to being delivered into the processingregion.

The showerhead 225 may comprise an upper plate 214 and a lower plate216. The plates may be coupled with one another to define a volume 218between the plates. The coupling of the plates may be so as to providefirst fluid channels 219 through the upper and lower plates, and secondfluid channels 221 through the lower plate 216. The formed channels maybe configured to provide fluid access from the volume 218 through thelower plate 216 via second fluid channels 221 alone, and the first fluidchannels 219 may be fluidly isolated from the volume 218 between theplates and the second fluid channels 221. The volume 218 may be fluidlyaccessible through a side of the gas distribution assembly 225.

FIG. 3 is a bottom view of a showerhead 325 for use with a processingchamber according to embodiments. Showerhead 325 may correspond with theshowerhead 225 shown in FIG. 2A. Through-holes 365, which show a view offirst fluid channels 219, may have a plurality of shapes andconfigurations in order to control and affect the flow of precursorsthrough the showerhead 225. Small holes 375, which show a view of secondfluid channels 221, may be distributed substantially evenly over thesurface of the showerhead, even amongst the through-holes 365, and mayhelp to provide more even mixing of the precursors as they exit theshowerhead than other configurations.

FIG. 4 shows a schematic partial cross-sectional view of an exemplarysubstrate support assembly 400 according to embodiments of the presenttechnology. Substrate support assembly 400 may be similar to substratesupport or pedestal 265 discussed previously, and may include some orall features discussed above with that structure. As illustrated, thesubstrate support assembly 400 includes a top puck 405, a backing plate415, a heater 425, a cooling plate 435, and a back plate 445. Backingplate 415 may be coupled with top puck 405. Cooling plate 435 may bedirectly or indirectly coupled with backing plate 415, and heater 425may be coupled between the cooling plate 435 and the backing plate 415.Back plate 445 may be coupled with backing plate 415 along a peripheryor exterior section 417 of backing plate 415. Back plate 445 may definea ledge 447 in a top surface 446 of back plate 445 that extends down toan interior region 449 of back plate 445 defined in the top surface 446.Interior region 449 of back plate 445 may extend radially from a centralaxis of back plate 445 and may define a volume 450 from below. Backplate 445 may also define sides of the volume 450 with a raised section451 of back plate 445 extending vertically to ledge 447.

Back plate 445 and backing plate 415 may be characterized by a similaror equivalent external diameter such that the coupled components definea substantially vertical sidewall of support assembly 400. Backing plate415 may at least partially define volume 450 from above, so that volume450 is a defined volume within substrate support assembly 400. Heater425 and cooling plate 435 may be housed within volume 450 inembodiments. Raised section 451 of back plate 445 may also includetrench 452 defined in top surface 446 of back plate 445. The trench 452may be configured to seat an o-ring or elastomeric element to provide aseal between back plate 445 and backing plate 415.

Top puck 405 may define one or more thermal breaks 408, 410 within thetop puck 405, which may at least partially define one or more channelswith backing plate 415, which will be described in greater detail below.Top puck 405 may define any number of thermal breaks within the top puck405, and may include at least or about 2, at least or about 3, at leastor about 4, at least or about 5, at least or about 6, at least or about7, at least or about 8, at least or about 9, at least or about 10, ormore in embodiments. In some embodiments, such as illustrated insubstrate support assembly 400, top puck 405 may define one or twothermal breaks. First thermal break 408 may be defined within a topsurface 406 of top puck 405, and may be characterized by a depth throughtop puck 405.

First thermal break 408 may be defined radially about top puck 405, andmay be configured to at least partially divide top puck 405 into aninterior zone 412 and an exterior zone 414 in embodiments. First thermalbreak 408 may be or include a trench defined about top puck 405 along aninterior radius of the top puck. The depth of first thermal break 408may be greater than half the thickness of top puck 405 in embodiments,and may be greater than or about 60%, greater than or about 70%, greaterthan or about 80%, greater than or about 90%, or equal to or about 100%of the thickness of top puck 405. In the case in which the trench fullyintersects top puck 405, interior zone 412 and exterior zone 414 may betwo separate components individually coupled with backing plate 415.First thermal break 408 may be configured to thermally isolate interiorzone 412 and exterior zone 414 in embodiments. Such isolation may allowinterior zone 412 and exterior zone 414 to be separately heated orcooled during operation.

The thermal breaks may include multiple breaks, including a secondthermal break 410, which may be defined in a bottom surface 407 of toppuck 405, or in a surface opposite first surface or top surface 406.Second thermal break 410 may be defined at a second internal radius oftop puck 405, which may be radially inward or radially outward of firstthermal break 408. Second thermal break 410 may be characterized by asecond depth through top puck 405, which may be greater than, equal to,or less than a first depth of first thermal break 408. For example, asillustrated, second thermal break 410 may be characterized by a depthless than a depth of first thermal break 408. Either or both of firstthermal break 408 and second thermal break 410 may extend continuouslyor discontinuously about top puck 405. For example, first thermal break408 may extend substantially continuously about top puck 405, but mayhave one or more connections, such as minimally thick extensions, at abottom region across the first thermal break 408 to couple the interiorzone 412 to the exterior zone 414 of top puck 405, which may allow aone-piece design of top puck 405. Second thermal break 410, however, mayhave sections about a radius of the trench in which the trench is notformed through top puck 405. This arrangement will be described infurther detail below.

A benefit of multiple thermal breaks is that a thermal break definedfrom a top surface and a thermal break defined from a bottom surface mayhelp to reduce crosstalk between the two zones, which may allow evenmore fine-tune temperature adjustments between the zones. Top puck 405may be composed of any number of materials, and in embodiments, may beor include an aluminum material. Top puck 405 may be any type ofaluminum, including a coated or plated aluminum. For example, top puck405 may be a nickel or titanium coated aluminum in embodiments, whichmay protect top puck 405 from etching.

Heater 425 may include a resistive heater or a fluid heater inembodiments. Heater 425 may include a polymer heater bonded or coupledwith a top surface 436 of cooling plate 435 and also bonded or coupledwith backing plate 415. Heater 425 may include multiple heaters inembodiments, and may include a first heater 426 and a second heater 427.First heater 426 may be coupled with the backing plate 415 at a firstlocation, and second heater 427 may be coupled with backing plate 415 ata second location. First heater 426 may be positioned at an interiorregion of cooling plate 435, and may be positioned within or in linewith interior zone 412. Second heater 427 may be positioned at anexterior region of cooling plate 435, and may be positioned within or inline with exterior zone 414. Second heater 427 may be positionedradially outward of first thermal break 408 in embodiments. A gap 437may be defined from above by backing plate 415 and may be defined frombelow by cooling plate 435. The gap 437 may be located between firstheater 426 and second heater 427, and may be an annular gap locatedradially between the two heaters. In some embodiments, second heater 427may extend proximate a radial edge of top surface 436 of cooling plate435, and second heater 427 may extend to a radial edge of top surface436 of cooling plate 435.

The first heater 426 and the second heater 427 may be operatedindependently of one another, and may be capable of adjustingtemperatures across the top puck 405, as well as a substrate residing onthe top puck 405. Each heater may have a range of operating temperaturesextending above or about 25° C., and each heater may be configured toheat above or about 50° C., above or about 60° C., above or about 70°C., above or about 80° C., above or about 90° C., above or about 100°C., above or about 125° C., above or about 150° C., above or about 175°C., above or about 200° C., above or about 250° C., above or about 300°C., above or about 350° C., above or about 400° C., above or about 500°C., above or about 600° C., above or about 700° C., or higher. Theheaters may also be configured to operate in any range encompassedbetween any two of these stated numbers, or smaller ranges encompassedwithin any of these ranges.

The first heater 426 and the second heater 427 may also be configured tooperate within a temperature range of one another, and configured tomaintain a specific temperature across the surface of the top puck 405or a substrate residing on top puck 405. For example, first heater 426may be configured to operate to maintain interior zone 412 at a firsttemperature, and second heater 427 may be configured to operate tomaintain exterior zone 414 at a second temperature similar to ordifferent from the first. Each temperature of either the heater or thezone may be any temperature stated or included above, which may allowthe two heaters to operate at a difference of tens or hundreds ofdegrees. Additionally, the difference between the operating temperatureof the two heaters, or the maintained temperature of the interior zone412 and the exterior zone 414, may be less than 10° C. in embodiments.The temperature difference between the two heaters or maintained by thetwo zones may also be less than or about 5° C., less than or about 4°C., less than or about 3° C., less than or about 2° C., less than orabout 1° C., less than or about 0.9° C., less than or about 0.8° C.,less than or about 0.7° C., less than or about 0.6° C., less than orabout 0.5° C., less than or about 0.4° C., less than or about 0.3° C.,less than or about 0.2° C., less than or about 0.1° C., or less inembodiments. By allowing such minute temperature differences between thetwo zones, temperature fluctuations occurring due to precursor flowacross a substrate, interference from other chamber components,reactions or operations occurring in one zone but not another based on afabrication step, and other fluctuation sources may be controlledagainst during operation. This may allow improved uniformity across thezones and across a substrate being processed compared to conventionaltechnology.

Cooling plate 435 may define one or more channels 438 within coolingplate 435. Channels 438 may be configured to distribute one or moretemperature controlled fluids about cooling plate 435. Channel 438 maybe accessed from a central port 439 at a central or interior region ofcooling plate 435, which may be accessible from a stem of the substratesupport assembly. A cooling fluid may be delivered up the stem and intocentral port 439, which may then allow the fluid to flow about channel438. Channel 438 may be in any number of geometric patterns, such as aspiral or coil, as well as substantially concentric circles about thecooling plate 435. The pattern may extend to an exterior of coolingplate 435 before returning to an exit port, which may also be located ata central region of the cooling plate, and may provide access toadditional channels or couplings within the stem of the pedestal, toallow return of the fluid to a heat exchanger or other apparatus forcooling and recirculation. As illustrated, cooling plate 435 may notfully extend to raised section 451 of back plate 445, and may maintain agap of volume 450 between a radial edge of cooling plate 435 and raisedsection 451 of back plate 445. Such a gap may limit or prevent thermalcommunication from the cooling plate 435 and heater 425 to back plate445, which may conduct through to top puck 405.

Top puck 405 may define one or more recessed ledges 404 about anexterior radius of the top puck 405. Recessed ledges 404 may extend orstep down towards an edge of top puck 405, which may be characterized byan outer diameter similar to or equal to an outer diameter of backingplate 415 and/or back plate 445. Two recessed ledges 404 are illustratedin FIG. 4, although the top puck 405 may define any number of recessedledges 404. Aspects of recessed ledges 404 and top puck 405 are furtherillustrated in FIG. 5 which shows another schematic partialcross-sectional view of exemplary substrate support assembly 400according to embodiments of the present technology.

As illustrated in FIG. 5, substrate support assembly 400 may include atop puck 405, which may be characterized by a plurality of grooves 505,which may be formed or defined about top puck 405. Grooves 505 mayprovide pathways for forming a vacuum chuck with a substrate residing ontop puck 405, which may limit substrate movement during operations. Toppuck 405 may also define one or more recessed ledges 404 as previouslydiscussed. As illustrated, a first recessed ledge 404 a and a secondrecessed ledge 404 b are defined in top puck 405, and second recessedledge 404 b may extend to an exterior edge of top puck 405. Top puck 405may define one or more recesses 510 within top puck 405. Recesses 510may be cylindrical recesses, rectangular recesses, or any other geometrythat extends to a depth through top puck 405. Recesses 510 may bedistributed about an edge region of top puck 405, and may include onerecess, two recesses, three recesses, four recesses, five recesses, sixrecesses, seven recesses, eight recesses, nine recesses, ten recesses,or more in embodiments.

Recesses 510 may provide locations for pins 515, which may be positionedwithin recesses 510 of top puck 405. The recesses 510 may be defined atany location about an exterior region of top puck 405, and inembodiments recesses 510 are defined within the recessed ledges 404defined in top puck 405. As illustrated, recesses 510 may be defined ina first recessed ledge 404 a located below a top surface 406 of top puck405, and above a second recessed ledge 404 b, located below firstrecessed ledge 404 a. The recesses 510 may be defined in multiplelocations about top puck 405 in recessed ledge 404 a, and inembodiments, recessed ledge 404 a may define between about 2 and about10 recesses 510, between about 2 and about 5 recesses 510, or betweenabout 2 and about 4 recesses 510. In some embodiments, recessed ledge404 a may define three recesses 510 distributed equidistantly about toppuck 405. Pins 515 may be or include a ceramic pin having a firstportion 516 seated within recess 510, and a second portion 517 extendingabove recess 510. Second portion 517 of pin 515 may define a surface onwhich an edge ring 520 is seated.

Edge ring 520 may be seated on a plurality of pins 515 located inrecesses 510 within top puck 405. Edge ring 520 may be a similarmaterial or a different material from top puck 405, and in embodiments,edge ring 520 may include a nickel plated aluminum or other platedaluminum, which may limit corrosion of the edge ring 520 during etchingoperations utilizing a halogen-containing precursor, for example. Edgering 520 may extend about the top puck along recessed ledges 404, andmay extend vertically above top puck 405 in embodiments so as to extendvertically above a top plane of the top puck 405. Edge ring 520 may becharacterized by an inner edge 522, which may be beveled or chamfered inembodiments, extending towards top puck 405. Edge ring 520 may also becharacterized by an outer diameter equal to or similar to an outerdiameter of top puck 405, such that in some embodiments, edge ring 520does not extend beyond an external radius of top puck 405. Edge ring 520may be seated on pins 515, and may float above top puck 405. In someembodiments, edge ring 520 may not contact top puck 405, which may allowa continuous spacing between each surface of top puck 405, includingrecessed ledges 404, and edge ring 520. A purge gas may be flowedthrough apertures through top puck 405 extending through recessed ledges404, which may allow continuous purging from about the edge ring 520.Edge ring 520 may allow an amount of precursor flow from external edgesof the chamber to be blocked to prevent or limit additional etching,deposition, or processing of edge regions of a substrate in someembodiments.

FIG. 6 shows a top plan view of an exemplary backing plate 600 accordingto embodiments of the present technology. Backing plate 600 may beconfigured to at least partially define flow channels with a top puck ofa substrate support assembly, and provide access for delivering a purgegas through the pedestal and top puck to limit or prevent deposition,etching, or particle accumulation on the substrate support assembly.Backing plate 600 may be characterized by a substantially annular shape,and may define a plurality of apertures through backing plate 600.Apertures 605 may be aligned with apertures through a top puck toprovide direct paths for a vacuum chuck to be applied through thebacking plate 600 and an associated top puck, such as top puck 405previously described. Apertures 610 and apertures 615 may provide accessto channels defined between the backing plate 600 and a top puck towhich the backing plate is coupled, which may direct a purge gas toadditional regions of the top puck.

Apertures 610 may provide access to a first recess 612 defined by a topsurface 602 of backing plate 600. Backing plate 600 may define one ormore apertures 610 distributed radially about backing plate 600, and asillustrated four are shown along with corresponding first recesses 612,although depending on the geometry, size, and spacing of a particularsubstrate support assembly, exemplary backing plates 600 may includemore or less apertures 610 and first recesses 612 in embodiments. Firstrecess 612 may be defined across an external section of backing plate600, and may be defined radially or laterally in two opposite directionsfrom aperture 610. The individual arms of first recess 612 may extendlaterally before curving or angling away from an external edge ofbacking plate 600. Along each arm of first recess 612 may be an accessaperture through a top puck associated with the backing plate, which mayprovide a flow path for a purge gas.

Apertures 615 may provide access to a second recess 616 defined by a topsurface 602 of backing plate 600. Backing plate 600 may define one ormore apertures 615 distributed radially about backing plate 600, and asillustrated four are shown along with corresponding second recesses 616,although depending on the geometry, size, and spacing of a particularsubstrate support assembly, exemplary backing plates 600 may includemore or less apertures 615 and second recesses 616 in embodiments.Apertures 615 providing access to second recesses 616 may be formed inan alternating manner about backing plate 600 with apertures 610providing access to first recesses 612 as illustrated in someembodiments. Second recess 616 may be defined radially inward towards acentral region of backing plate 600 in embodiments, and may define arecursive pattern expanding to two paths 618, which may then extend tofour paths 620. Along each arm of second recess 616 may be an accessaperture through a top puck associated with the backing plate, which mayprovide a flow path for a purge gas. In this way, the combination offirst recesses 612 as illustrated may provide access to a total of eightapertures defined through an associated top puck, and the combination ofsecond recesses 616 may provide access to 16 apertures defined throughan associated top puck radially inward of the eight apertures accessedfrom first recesses 612. Such a design may provide ample purge gas flowthrough the top puck, which may limit or prevent particle accumulationon a surface of the top puck, or about a substrate residing on the toppuck. In other embodiments, any additional number of apertures may beformed about and through the backing plate and associated top puck.

Backing plate 600 may also define third recesses 625 extending about aradius of backing plate 600, which may align with a thermal break, suchas first thermal break 408 described above. Backing plate 600 may alsodefine fourth recesses 630, which may fully penetrate backing plate 600,unlike any other recesses discussed, which may be defined within topsurface 602. Fourth recesses 630 may align with a thermal break, such assecond thermal break 410 described above. Because second thermal break410 extends upward through a bottom of top puck 405, by providing fullrecess through backing plate 600 with fourth recesses 630, a moreconsistent and pronounced thermal break may be afforded. One or both ofthird recesses 625 and fourth recesses 630 may also align with a gapbetween heaters, such as gap 437 described above. This may provideadditional thermal break between an interior zone and an exterior zoneof a substrate support assembly.

Turning to FIG. 7A is shown a schematic partial cross-sectional view ofan exemplary substrate support assembly according to embodiments of thepresent technology. The cross-section may be through line A asillustrated in FIG. 6, for example, which may provide an illustration ofthe apertures 610, and first recesses 612 of backing plate 600. Thesubstrate support assembly may be similar to or an alternate view ofsubstrate support assembly 400 described previously, and may include atop puck 405, an edge ring 520, a backing plate 415, and a back plate445. As illustrated, back plate 445 may define one or more channels 705for delivering a purge gas from a central region of the substratesupport assembly, such as a stem, out to an exterior of the substratesupport assembly. Channel 705 may extend radially outward through backplate 445, before transitioning vertically towards backing plate 415.Aperture 610 may provide access to first recess 612, which may produce achannel defined from above by top puck 405. Within this channel, alongtop puck 405 may be defined one or more apertures up through top puck405, into an edge region of top puck 405, such as under edge ring 520.

FIG. 7B shows a schematic partial cross-sectional view of an exemplarysubstrate support assembly according to embodiments of the presenttechnology. The cross-section may be through line B as illustrated inFIG. 6, for example, which may provide an illustration of the apertures615, and second recesses 616 of backing plate 600. As illustrated, backplate 445 may define one or more additional channels 705 for deliveringa purge gas from a central region of the substrate support assembly,such as a stem, out to an exterior of the substrate support assembly.Channel 705 may extend radially outward through back plate 445, beforetransitioning vertically towards backing plate 415. Aperture 615 mayprovide access to second recess 616, which may produce a channel definedfrom above by top puck 405. Within this channel, along top puck 405 maybe defined one or more apertures up through top puck 405, into one ormore interior regions of top puck 405 through the recursive path ofrecess 616. The apertures may be defined through top puck 405 inmultiple locations, such as along the radial portion of recess 616, aswell as along the recursive portions 618 and 620. For example, exemplaryapertures 715, 716 are illustrated in FIG. 7C, which shows a schematicpartial cross-sectional view of an exemplary substrate support assemblyaccording to embodiments of the present technology along an alternateline or cross-section. As illustrated, aperture 715 may be located alongrecess 616, while aperture 716 may be located within recursive region618. It is to be understood that the exemplary aperture patterndiscussed is for illustration alone, and a variety of aperture patternsenabled by the present technology, including backing plateconfigurations, are similarly encompassed.

FIG. 8 shows a schematic partial cross-sectional view of an exemplarysubstrate support assembly 800 according to embodiments of the presenttechnology. Substrate support assembly 800 may be similar to substratesupport 400 or pedestal 265 discussed previously, and may include someor all features discussed above with those structures. Substrate supportassembly 800 may include a top puck 805. Coupled with top puck 805 maybe a plurality of heaters 815. The heaters 815 may be resistive heatersor fluid channels through which a temperature controlled fluid isflowed. In embodiments such as those illustrated, the heaters 815 may beresistive heaters extending across a back surface of the top puck 805. Acooling plate 820 may be coupled with the plurality of heaters 815 at atop surface 822 of the cooling plate. Cooling plate 820 may also defineone or more channels 825 configured to distribute a temperaturecontrolled fluid through the cooling plate.

Insulator 830 may be coupled with a second surface 824 of cooling plate820 opposite top surface 822. Insulator 830 may be or include a ceramicin embodiments, and top puck 805 may also be or include a ceramic inembodiments. Cooling plate 820 and a back plate 835 may be or includealuminum in embodiments, including a treated or coated aluminum aspreviously described. Back plate 835 may be coupled below insulator 830.Back plate 835, insulator 830, and cooling plate 820 may be coupled withone another, and in embodiments may be directly coupled together. Thecoupled pieces may each define at least a portion of at least onechannel 840 through the structure, which may provide access for a liftpin 842. Lift pin 842 may be configured to be raised through channel 840and through top puck 805 to lift and lower a substrate. Cooling plate820 may define a recessed ledge 827 from top surface 822, extending to aradial edge of cooling plate 820. Recessed ledge 827 may extend past aradial edge of top puck 805.

An edge ring 845 may be positioned on recessed ledge 827 about anexterior of cooling plate 820. Edge ring 845 may include a top surface846 extending from a body of edge ring 845 seated on recessed ledge 827.Top surface 846 may define a lip 847 that extends radially orhorizontally over an exterior radius of top puck 805, and may becharacterized by a beveled or chamfered edge extending towards top puck805. In embodiments, lip 847 may not contact top puck 805, and mayprovide a space between the components configured to allow passage of apurge gas between the lip 847 and the top puck 805. Edge ring 845 mayalso include a sidewall 848 extending from a body of edge ring 845seated on recessed ledge 827. Sidewall 848 may define an extension 849that extends vertically about insulator 830 and back plate 835.Extension 849 may not contact insulator 830 or back plate 835, and mayprovide a space between the components configured to allow passage of apurge gas between the extension 849, and insulator 830 and back plate835. Extension 849 may extend to a base thickness of back plate 835, andmay extend slightly beyond or below back plate 835 in embodiments tolimit or prevent particle accumulation on the stacked components.

Heaters 815 may include a plurality of heaters in various configurationsacross a back of top puck 805. For example, heaters 815 may include aplurality of polymer or printed heaters extending radially outward alongtop puck 805 to produce multiple radial zones across top puck 805. Forexample, a central heater in a circular pattern may be disposed orprinted at a central location under top puck 805. Additional heatershaving an annular shape may be disposed about the central heater, andmay include any number of heaters extending outward including greaterthan or about 2 heaters, greater than or about 3 heaters, greater thanor about 4 heaters, greater than or about 5 heaters, greater than orabout 6 heaters, greater than or about 7 heaters, or more. The heatersmay include adjustable resistances, which may allow the heaters to beindependently controlled and operated at different temperatures. Eachheater may be operated at any of the temperatures previously described,and the heaters may be maintained at temperature differentials aspreviously described.

Turning to FIG. 9 is shown an additional schematic partialcross-sectional view of an exemplary substrate support assembly 800according to embodiments of the present technology. FIG. 9 illustrates across-sectional view with edge ring 845 removed. As illustrated, toppuck 805 can be seen to include a recessed ledge 907 over which lip 847of edge ring 845 may extend. A recessed ledge 909 may also be definedalong a top surface of cooling plate 820 at a radial edge of the toppuck 805. As illustrated, recessed ledge 909 may extend radially inwardalong cooling plate 820 and under top puck 805 less than half thedistance of recessed ledge 907. In some embodiments, recessed ledge 909may extend less than or about 40% the radial inward distance of recessedledge 907, and may extend less than or about 30%, less than or about20%, less than or about 10%, less than or about 5%, or less.

Recessed ledge 909 may at least partially define a channel 910 definedfrom below by top surface 822 of cooling plate 820. Channel 910 mayextend below an outer edge of the top puck 805, such as within recessedledge 909, and channel 910 may be configured to seat an elastomericelement or o-ring between the top puck and cooling plate. As notedabove, cooling plate 820, insulator 830, and back plate 835 may bedirectly coupled together, which may reduce or eliminate particledistribution between the components. Top puck 805 may be coupled withthe structure separately, and an elastomeric element positioned betweenthe top puck 805 and cooling plate 820 within a channel 910 asillustrated may limit or prevent any particle distribution between thetop puck and other components.

In the preceding description, for the purposes of explanation, numerousdetails have been set forth in order to provide an understanding ofvarious embodiments of the present technology. It will be apparent toone skilled in the art, however, that certain embodiments may bepracticed without some of these details, or with additional details.

Having disclosed several embodiments, it will be recognized by those ofskill in the art that various modifications, alternative constructions,and equivalents may be used without departing from the spirit of theembodiments. Additionally, a number of well-known processes and elementshave not been described in order to avoid unnecessarily obscuring thepresent technology. Accordingly, the above description should not betaken as limiting the scope of the technology.

Where a range of values is provided, it is understood that eachintervening value, to the smallest fraction of the unit of the lowerlimit, unless the context clearly dictates otherwise, between the upperand lower limits of that range is also specifically disclosed. Anynarrower range between any stated values or unstated intervening valuesin a stated range and any other stated or intervening value in thatstated range is encompassed. The upper and lower limits of those smallerranges may independently be included or excluded in the range, and eachrange where either, neither, or both limits are included in the smallerranges is also encompassed within the technology, subject to anyspecifically excluded limit in the stated range. Where the stated rangeincludes one or both of the limits, ranges excluding either or both ofthose included limits are also included.

As used herein and in the appended claims, the singular forms “a”, “an”,and “the” include plural references unless the context clearly dictatesotherwise. Thus, for example, reference to “a layer” includes aplurality of such layers, and reference to “the precursor” includesreference to one or more precursors and equivalents thereof known tothose skilled in the art, and so forth.

Also, the words “comprise(s)”, “comprising”, “contain(s)”, “containing”,“include(s)”, and “including”, when used in this specification and inthe following claims, are intended to specify the presence of statedfeatures, integers, components, or operations, but they do not precludethe presence or addition of one or more other features, integers,components, operations, acts, or groups.

1. A substrate support assembly comprising: a top puck; a backing platecoupled with the top puck; a cooling plate coupled with the backingplate; a heater coupled between the cooling plate and the backing plate;and a back plate coupled with the backing plate about an exterior of thebacking plate, wherein the back plate at least partially defines avolume, and wherein the heater and the cooling plate are housed withinthe volume.
 2. The substrate support assembly of claim 1, wherein thetop puck defines a thermal break between an interior zone and anexterior zone of the top puck, and wherein the thermal break comprises atrench defined about an interior radius of the top puck.
 3. Thesubstrate support assembly of claim 2, wherein the thermal breakcomprises a first trench defined about an interior radius of the toppuck at a first surface of the top puck, and a second trench definedabout a second interior radius of the top puck at a second surface ofthe top puck opposite the first surface.
 4. The substrate supportassembly of claim 3, wherein at least one of the first trench and thesecond trench extends discontinuously about the top puck.
 5. Thesubstrate support assembly of claim 1, wherein the cooling plate definesat least one channel within the cooling plate configured to distribute afluid delivered from a central port in the cooling plate.
 6. Thesubstrate support assembly of claim 1, wherein the heater comprises afirst heater coupled with the backing plate at a first location, and asecond heater coupled with the backing plate at a second locationradially outward from the first location.
 7. The substrate supportassembly of claim 6, wherein the cooling plate and the backing platedefine a gap located radially between the first heater and the secondheater, and wherein the second heater extends to a radial edge of a topsurface of the cooling plate.
 8. The substrate support assembly of claim7, wherein the first heater and the second heater are configured tooperate independently of one another, and wherein the first heater andthe second heater are configured to maintain temperature uniformityacross a substrate on the substrate support assembly of +/−0.5° C. 9.The substrate support assembly of claim 1, wherein the top puckcomprises aluminum.
 10. The substrate support assembly of claim 1,wherein the heater comprises a polymer heater.
 11. The substrate supportassembly of claim 1, wherein the top puck defines at least one recessedledge about an exterior radius of the top puck.
 12. The substratesupport assembly of claim 11, further comprising an edge ring extendingabout the top puck along the recessed ledge, wherein the edge ringextends vertically above a top plane of the top puck.
 13. The substratesupport assembly of claim 12, wherein the edge ring is characterized byan outer diameter equal to an outer diameter of the top puck.
 14. Thesubstrate support assembly of claim 12, wherein the top puck defines aplurality of recesses, and wherein the edge ring is configured to seaton ceramic pins located within the plurality of recesses.
 15. Thesubstrate support assembly of claim 14, wherein the edge ring seats onthe ceramic pins without contacting the top puck.
 16. A substratesupport assembly comprising: a top puck; a plurality of heaters coupledto the top puck, wherein the heaters comprise resistive heatersextending across a back surface of the top puck; a cooling plate coupledwith the plurality of heaters at a first surface of the cooling plate,wherein the cooling plate defines a channel configured to distribute atemperature controlled fluid through the cooling plate; and an insulatorcoupled with a second surface of the cooling plate opposite the firstsurface.
 17. The substrate support assembly of claim 16, wherein the toppuck and the insulator comprise a ceramic.
 18. The substrate supportassembly of claim 16, wherein the plurality of heaters comprise at leastfour printed heaters, and wherein at least three of the four printedresistive heaters are characterized by an annular shape.
 19. Thesemiconductor processing system of claim 16, wherein the top puck andthe cooling plate define a channel extending below an outer edge of thetop puck, wherein the channel is configured to seat an elastomericelement.
 20. The semiconductor processing system of claim 16, furthercomprising an edge ring positioned along the recessed ledge about anexterior of the cooling plate.